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A specific polytype of silicon carbide (SiC) with high-electron mobility, widely used for power and RF devices. (see Polytype)

Automotive qualification standards defining stress tests and reliability requirements for integrated circuits (Q100) and discrete semiconductors (Q101). Widely used for SiC devices.

Devices that increase RF signal power with high efficiency.

High-temperature treatment that activates dopants and repairs implantation damage during SiC device fabrication.

Augmented reality and virtual reality applications using ultra-high-purity or semi-insulating SiC for optical components.

Technique measuring surface roughness at nanoscale.

A performance metric for power semiconductor materials defined by Baliga, relating critical electric field, carrier mobility, and permittivity.

The energy difference between the valence and conduction bands; SiC’s wide bandgap enables high-voltage and high-temperature operation.

A dislocation in the SiC basal plane that can expand into stacking faults during device operation, degrading device reliability.

The maximum voltage a device can withstand before electrical breakdown occurs.

Impurity level within the entire SiC material volume.

The two polar SiC wafer faces that influence epitaxy and oxidation behavior.

The average time minority charge carriers exist before recombination.

Document certifying composition and purity of a SiC batch.

Chemical and thermal treatments removing surface impurities to achieve high-surface purity.

Controlled environment with very low particle counts.

A sustainable production setup where processed gases and materials are reused or regenerated, significantly reducing waste and resource consumption.

The maximum electric field a material can withstand before electrical breakdown; SiC’s high value enables thinner drift layers and higher-voltage power devices.

Mechanical breaking of bulk SiC into granules suitable for PVT charge loading.

Methods and equipment used to grow monocrystalline SiC boules with high-yield and low defect density.

The atomic arrangement of SiC atoms, where different stacking sequences form polytypes such as 4H-SiC.

Gas-phase method for depositing high-purity SiC layers.

The number of crystal defects per unit area or volume, impacting yield and device performance.

Crystal imperfections such as micropipes, dislocations, stacking faults, or implantation damage that degrade device performance or yield. (see Micropipe, Dislocation and Stacking Fault)

The final step in production: encapsulation of a chip for protection and connectivity.

A lattice defect where atomic planes are misaligned. Important types in SiC include basal plane dislocations (BPD) and threading dislocations (TD). (see BPD and TD)

Introducing impurities (N for n-type, Al for p‑type) to modify conductivity; requires high‑temperature activation in SiC.

A lightly doped region in power devices that supports most of the breakdown voltage in the off-state and strongly influences on-resistance. (see Breakdown voltage and RDS (on))

Ratio of electrical output power to input power; SiC devices improve system efficiency through reduced switching and conduction losses.

A major market for SiC power devices, particularly MOSFETs and Schottky diodes, used in traction inverters and fast charging systems. (see MOSFET and Schottky Diode).

Defects arising during epitaxial growth, such as carrot or triangular defects.

Growth of a crystalline SiC layer on a substrate to form the active device structure. (see Substrate)

Chemical or plasma-based material removal used in SiC device fabrication or surface preparation.

A semiconductor manufacturing facility.

Validation that initial production meets specifications.

Durability of the oxide layer in SiC MOSFETs.

Systems generating electrical or RF power, benefiting from SiC’s high efficiency and high temperature capability.

Bulk analysis technique detecting metallic impurities with high accuracy.

The size of polycrystalline SiC grains used as source material in physical vapor transport (PVT) crystal growth.

International classification code for traded goods.

U.S. version of the Harmonized Tariff Code.

SiC’s ability to operate at higher temperatures than silicon.

Epitaxial growth of SiC on a SiC substrate to create high-quality layers for device fabrication.

International automotive quality management standard.

Heating using electromagnetic induction, commonly used in SiC CVD and PVT reactors for uniform thermal control.

A power converter that transforms DC into AC; SiC devices enable higher switching frequencies, improved efficiency, and smaller cooling systems. Typically used in EV motor drives to convert electrical energy in traction and in industrial systems.

Introduction of dopants through ion bombardment, a key process in SiC device fabrication.

International quality management standards issued by the International Organization for Standardization.

A SiC transistor type used in specific applications.

The density of loosely packed SiC granules, influencing thermal conductivity and sublimation behavior.

Tracking materials from origin to final product.

Document providing safety information for chemicals.

A fast‑switching SiC power transistor. Commonly used in high-efficiency power conversion systems.

Deposition of metal layers to form electrical contacts with controlled resistance and thermal stability in SiC device fabrication.

A hollow defect in SiC crystals negatively affecting device performance.

Single-crystal SiC used as the semiconductor material for electronic and optical applications.

The density of electronic trap states at the SiC/SiO₂ interface, a key parameter influencing the performance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).

Doping types introducing electrons (n‑type) or holes (p‑type).

A fundamental design relationship in power semiconductors: reducing the device’s on-resistance (RDS(on)) generally reduces breakdown voltage, and vice versa.

EV subsystem enabling efficient charging. SiC MOSFETs and Schottky diodes convert AC grid power into DC to charge the battery.

The size distribution and uniformity of SiC granules after crushing.

Units measuring impurity concentrations.

The dominant industrial method for growing monocrystalline 4H-SiC boules using a seed rod in a high-temperature sublimation process. (see 4H-SiC and Seed Rod)

Mechanical and chemical smoothing of a SiC wafer to remove subsurface damage and achieve epi‑ready roughness.

Multi‑grain SiC used as source material for sublimation growth of monocrystalline SiC.

Variations in SiC crystal stacking sequences that produce different material properties (e.g., 4H-SiC). (see 4H-SiC)

Applications that convert, control, or manage electrical energy using semiconductor power devices such as SiC MOSFETs and diodes. Typical examples include EV inverters, fast chargers, renewable energy converters, and industrial motor drives.

Formal notice to the customers about any changes affecting product form, fit, or function.

Standardized process in automotive and aerospace industries.

Testing process validating SiC material suitability.

End-use RF systems such as radar or 5G infrastructure.

Systems generating or processing RF signals. Used in radar, satellite communications, and telecom infrastructure.

On-state resistance of a MOSFET, which determines conduction losses in power devices. (see MOSFET)

EU regulation governing chemical safety.

Integration with SAP enterprise resource planning (ERP) systems for production and inventory tracking.

A fast‑switching diode with low forward voltage drop. Used in fast-switching rectification stages of power electronics.

Ultra‑sensitive method for measuring trace impurities and dopants by sputtering the surface with an ion beam and analyzing the ejected secondary ions.

A rod-shaped SiC seed crystal used to initiate crystal growth in PVT or Czochralski (CZ) processes.

Electron microscopy techniques used to analyze SiC microstructures and defects.

SiC with extremely low free carriers, used in RF and high‑voltage applications.

A material whose electrical conductivity lies between that of a conductor and an insulator and whose conductivity can be controlled, enabling electronic devices.

A wide bandgap semiconductor known for its high thermal conductivity, mechanical strength, and ability to operate at high voltages and temperatures. (see Wide Bandgap)

A reactor used for chlorosilane‑based deposition at high temperature, often known for its rod-based heating configuration.

A chlorine‑based silicon precursor used in semiconductor processing.

A planar defect disrupting atomic layer stacking.

The 1:1 atomic ratio of Si to C in SiC.

A SiC wafer serving as the base material for epitaxial growth and device fabrication.

Measures ensuring controlled and secure material handling.

The impurity concentration on external SiC surfaces, critical to avoid contamination during PVT loading.

Energy dissipated during switching transitions; SiC devices reduce switching loss, enabling higher-frequency and more efficient power converters.

The ability of SiC to conduct heat efficiently (≈3× higher than silicon), enabling higher power density and reduced cooling requirements in power electronics.

A dislocation extending vertically through the epitaxial layer that can impact device performance and reliability.

Silicon containing gas used as a precursor in CVD processes for high-purity silicon and SiC.

Highly purified process gases such as TCS and STC used to minimize contamination during SiC deposition.

A system to recover and reuse process gases.

A thin SiC slice used for semiconductor manufacturing.

Semiconductor materials with large bandgaps that enable high-voltage, high-temperature, and high-power operation (e.g., SiC and GaN). (see SiC)

Notation for purity levels such as 8N = 99.999999%.

Percentage of usable product in manufacturing.

Kagan Ceran, CEO of Zadient Technologies, commented: “This milestone marks an important step for Zadient and for Europe…”

The fund “Révolution Environnementale et Solidaire”, funded by Crédit Mutuel Alliance Fédérale’s societal dividend and managed by Crédit Mutuel Impact, led this round alongside European Innovation Council Fund. Zadient’s historical shareholders also took part in this round.

In March 2025, the SiC source material team in Bitterfeld successfully concluded the regulatory approval procedure with the authorities of Saxony-Anhalt for its next-generation silicon carbide (SiC) source material production facility.

Dr. Staudigl brings a distinguished background, having earned his Ph.D. in Chemistry from Ludwig Maximilian University of Munich , followed by post- doctoral research at Harvard University.

In November, Nathalie Attar (Customer Relations Manager) and Dr. Jan Richter (CTO) represented Zadient Technologies at SEMICON Europe 2024 in Munich.

At the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024 in Durham, USA, Zadient Technologies continued to advance its global momentum.

Zadient Materials Europe GmbH (ZME), a wholly-owned subsidiary of Zadient Technologies SAS and a leading innovator in silicon carbide (SiC) source material development.

Zadient has reached another major milestone on its path toward industrial-scale silicon carbide (SiC) source material production.

Following the strong industry response at ICSCRM 2022 in Davos, Zadient Technologies continued to strengthen its position in the global silicon carbide (SiC) ecosystem during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, held in Sorrento, Italy.

During the International Conference on Silicon Carbide and Related Materials (ICSCRM 2022) held in Davos, Switzerland, Zadient Technologies marked a pivotal moment in its early company history.

“Moving from 150mm to 200mm wafers is not simply a manufacturing upgrade — it is a strategic shift…”

“Europe’s renewed EV momentum highlights how quickly energy economics can reshape industrial demand…”

“Solid-state transformers (SSTs) are emerging as a key enabler in next-generation power electronics, creating a compelling growth opportunity…”

“The SiC industry’s current correction cycle deserves clear-eyed interpretation…”