Media

Resistive Heating  –  A conventional heating method using electric resistance elements to heat the reactor environment. Less efficient for large volumes than inductive heating.

SAP Integration  –  Enterprise software integration for seamless order, inventory, and production tracking especially valuable for corporate customers with automated systems.

Seed Rod  –  A purified silicon or SiC rod used as a template for crystal growth in PVT or CZ (Czochralski) processes.

Semiconductor  –  A material that can act as both a conductor and insulator, enabling modern electronics.

Semi-Insulating SiC  –  Material with very low free carrier concentration, enabled by low nitrogen content, used in RF devices and high-voltage applications.

SiC (Silicon Carbide)  –  A wide-bandgap semiconductor material known for its thermal conductivity, mechanical strength, and chemical resistance. Used in power electronics, RF applications, and now increasingly in optics. A compound made of silicon and carbon used to make powerful, efficient semiconductors

Siemens Reactor  –  A type of CVD reactor used for the deposition of silicon or SiC from gaseous chlorosilanes at high temperatures, often known for its rod-based heating configuration.

SIMS (Secondary Ion Mass Spectrometry)  –  An ultra-sensitive method used to detect trace elements and dopants (like nitrogen) in solids, down to parts-per-trillion levels.

STC (Silicon Tetrachloride)  –  A silicon precursor (SiCl₄) used in semiconductor production and as part of closed-loop recycling systems for chlorosilanes.

Stoichiometry  –  The precise 1  –  1 atomic ratio of silicon to carbon in SiC. Critical for consistent growth behavior and material properties in downstream applications.

Substrate  –  The base wafer onto which other layers are grown or built.

Surface Purity  –  The impurity level present on the outer surface of a material, often impacted by post-processing like crushing or cleaning. Our post-processing reduces these to below 100 ppbw.

Switching Loss  –  Energy lost when a device turns on and off; SiC reduces this dramatically.

TCS (Trichlorosilane)  –    A silicon-containing gas (SiHCl₃) used as a precursor in the chemical vapor deposition (CVD) process for producing high-purity silicon and SiC.

Thermal Conductivity  –  How well a material carries heat; SiC has excellent thermal conductivity.

Ultra-High Purity Precursor Gases  –  Specially purified gases such as TCS and STC used in CVD to ensure minimal impurity introduction during SiC deposition.

Vent Gas Recycling System (VGR)  –  A closed-loop system that captures and purifies excess process gases (e.g., HCl, TCS, STC) for reuse in the CVD process, improving cost-efficiency and environmental performance.

Wafer  –  A thin, flat slice of semiconductor material used to build electronic devices.

XN Purity Scale  –  A shorthand notation to describe purity levels. For example, 8N refers to a material that is 99.999999% pure, meaning 1 part impurity per 100 million.

Yield  –  The percentage of usable chips produced from a wafer.

AR/VR Applications – Augmented Reality and Virtual Reality. SiC’s optical transparency, when produced at ultra-high purity, opens up new use cases in optical-grade substrates for lenses and displays.

Bandgap – A property that affects how a semiconductor works; SiC has a wide bandgap for handling high power.

Breakdown Voltage – The highest voltage a device can handle before it fails.

Bulk Purity – Refers to the level of chemical purity within the entire volume of a solid material, such as a polycrystalline SiC chunk. We achieve less than 150 ppbw for key metals.

Cleaning (Post-Processing) – Chemical and thermal treatments applied to crushed SiC to remove surface impurities and achieve ppb-level surface purity.

Defects – Tiny imperfections in the crystal that can reduce performance or reliability.

Cleanroom – A highly controlled environment free of dust, essential for making semiconductor devices.

Closed-Loop System – A sustainable production setup where process gases and materials are reused or regenerated, significantly reducing waste and resource consumption.

Crushing (Post-Processing) – The mechanical process of breaking bulk SiC into granules suitable for PVT charge loading, with special precautions to avoid metal contamination.

Crystal Structure – The atomic arrangement in a material; in SiC, different structures (like 4H) give different properties.

CVD (Chemical Vapor Deposition) –  A gas-phase method for producing high-purity solid materials. At Zadient, it is used for synthesizing ultra-pure SiC source material. A method for growing high-quality SiC layers from gases.

Device Packaging – The final step in production, enclosing the chip in a protective case and preparing it for use in systems.

Dislocation – A defect where the crystal structure is misaligned, affecting electrical behavior.

Annealing – heat treatment used to relieve internal stress, reduce defects, or modify impurity profiles in SiC materials. Heating a wafer to activate dopants and repair damage from ion implantation.

4H-SiC – A specific crystal structure of SiC with high electron mobility, ideal for power electronics.

Schottky Diode – A type of diode made from SiC that switches fast and loses less energy.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) – A transistor used for fast, efficient switching; widely made using SiC.

Wide Bandgap (WBG) – A group of materials (like SiC and GaN) that can operate at higher voltages, frequencies, and temperatures.