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A specific crystal structure of SiC with high electron mobility, ideal for power electronics.

heat treatment used to relieve internal stress, reduce defects, or modify impurity profiles in SiC materials. Heating a wafer to activate dopants and repair damage from ion implantation.

Augmented Reality and Virtual Reality. SiC’s optical transparency, when produced at ultra-high purity, opens up new use cases in optical-grade substrates for lenses and displays.

A property that affects how a semiconductor works; SiC has a wide bandgap for handling high power.

The highest voltage a device can handle before it fails.

Refers to the level of chemical purity within the entire volume of a solid material, such as a polycrystalline SiC chunk. We achieve less than 150 ppbw for key metals.

Chemical and thermal treatments applied to crushed SiC to remove surface impurities and achieve ppb-level surface purity.

A highly controlled environment free of dust, essential for making semiconductor devices.

A sustainable production setup where process gases and materials are reused or regenerated, significantly reducing waste and resource consumption.

The mechanical process of breaking bulk SiC into granules suitable for PVT charge loading, with special precautions to avoid metal contamination.

The atomic arrangement in a material; in SiC, different structures (like 4H) give different properties.

A gas-phase method for producing high-purity solid materials. At Zadient, it is used for synthesizing ultra-pure SiC source material. A method for growing high-quality SiC layers from gases.

Tiny imperfections in the crystal that can reduce performance or reliability.

The final step in production, enclosing the chip in a protective case and preparing it for use in systems.

A defect where the crystal structure is misaligned, affecting electrical behavior.

A transistor used for fast, efficient switching; widely made using SiC.

A conventional heating method using electric resistance elements to heat the reactor environment. Less efficient for large volumes than inductive heating.

Enterprise software integration for seamless order, inventory, and production tracking especially valuable for corporate customers with automated systems.

A type of diode made from SiC that switches fast and loses less energy.

A purified silicon or SiC rod used as a template for crystal growth in PVT or CZ (Czochralski) processes.

Material with very low free carrier concentration, enabled by low nitrogen content, used in RF devices and high-voltage applications.

A material that can act as both a conductor and insulator, enabling modern electronics.

A wide-bandgap semiconductor material known for its thermal conductivity, mechanical strength, and chemical resistance. Used in power electronics, RF applications, and now increasingly in optics. A compound made of silicon and carbon used to make powerful, efficient semiconductors

A type of CVD reactor used for the deposition of silicon or SiC from gaseous chlorosilanes at high temperatures, often known for its rod-based heating configuration.

An ultra-sensitive method used to detect trace elements and dopants (like nitrogen) in solids, down to parts-per-trillion levels.

A silicon precursor (SiCl₄) used in semiconductor production and as part of closed-loop recycling systems for chlorosilanes.

The precise 1  –  1 atomic ratio of silicon to carbon in SiC. Critical for consistent growth behavior and material properties in downstream applications.

The base wafer onto which other layers are grown or built.

The impurity level present on the outer surface of a material, often impacted by post-processing like crushing or cleaning. Our post-processing reduces these to below 100 ppbw.

Energy lost when a device turns on and off; SiC reduces this dramatically.

A silicon-containing gas (SiHCl₃) used as a precursor in the chemical vapor deposition (CVD) process for producing high-purity silicon and SiC.

How well a material carries heat; SiC has excellent thermal conductivity.

Specially purified gases such as TCS and STC used in CVD to ensure minimal impurity introduction during SiC deposition.

A closed-loop system that captures and purifies excess process gases (e.g., HCl, TCS, STC) for reuse in the CVD process, improving cost-efficiency and environmental performance.

A thin, flat slice of semiconductor material used to build electronic devices.

A group of materials (like SiC and GaN) that can operate at higher voltages, frequencies, and temperatures.

A shorthand notation to describe purity levels. For example, 8N refers to a material that is 99.999999% pure, meaning 1 part impurity per 100 million.

The percentage of usable chips produced from a wafer.

In March 2025, the SiC source material team in Bitterfeld successfully concluded the regulatory approval procedure with the authorities of Saxony-Anhalt for its next-generation silicon carbide (SiC) source material production facility.

Zadient Technologies is pleased to announce its selection for the prestigious European Innovation Council (EIC) Strategic Technologies for Europe Platform (STEP) Scale-Up funding.

Sainte-Helene-du-Lac, France, 18 March 2025

Saint-Helene du Lac, France, 12 February 2025

Saint-Helene du Lac, France, 10 February 2025

In November, Nathalie Attar (Customer Relations Manager) and Dr. Jan Richter (CTO) represented Zadient Technologies at SEMICON Europe 2024 in Munich.

At the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024 in Durham, USA, Zadient Technologies continued to advance its global momentum.

Zadient Materials Europe GmbH (ZME), a wholly-owned subsidiary of Zadient Technologies SAS and a leading innovator in silicon carbide (SiC) source material development.

Saint-Helene du Lac, France, 13 November 2023

Zadient has reached another major milestone on its path toward industrial-scale silicon carbide (SiC) source material production.

Zadient today achieved first SiC out from its production scale CVD reactor with an ultimate annual capacity of 250 tons/yr.

Following the strong industry response at ICSCRM 2022 in Davos, Zadient Technologies continued to strengthen its position in the global silicon carbide (SiC) ecosystem during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, held in Sorrento, Italy.

Zadient today announced the successful closing of its third funding round lead by Heraeus Group.

Phase 1 source material capacity expansion of 700 tons/yr was initiated today at Zadient’s plant outside of Leipzig.

Saint-Helene du Lac, France, 10 December 2022

During the International Conference on Silicon Carbide and Related Materials (ICSCRM 2022) held in Davos, Switzerland, Zadient Technologies marked a pivotal moment in its early company history.

Meta’s AR glasses with Silicon Carbide waveguide lenses are set to revolutionize the AR glass market.

For applications where speed, power and the ability to handle high temperatures is necessary GaN on SiC devices are rising up as the solution of choice.

Wolfspeed develops a bankruptcy-rebuilding deal with Apollo, a move tipped to
slash billions in debt.

Despite slowdown in 2024 the Yole Group predicts 20% CAGR from 2024-2030 to reach $10.3 billion by 2030.

Toyota selects Rohm’s SiC MOSFET for its new bZ5 crossover-type battery electric vehicle (BEV) for the Chinese market.

Sales of EVs
accelerate in Germany and the rest of Europe in the first half of 2025.

The age of silicon carbide has arrived in full force and was on display at PCIM.

Ralf Bornefeld, General Manager of the Power Semiconductors and Modules Business Unit expresses the ambition of Bosch to secure a leadership position in the SiC market.

The global SiC (Silicon Carbide) industry is underwent a transformative phase
in 2024, driven by accelerated capacity expansion and significant performance improvements in SiC devices to drive the global market in 2025.

In China 2025 has been proclaimed the “Year One of 8 SiC Wafers”.

X Oct 2023, Leipzig, Germany – Zadient today achieved first SiC out from its production scale CVD reactor with an ultimate annual capacity of 250 tons/yr.